8th International Workshop on Crystal Growth Technology (IWCGT-8)
Berlin/Germany · new date: June 13-17, 2021
The IWCGT-8, originally scheduled for June 2020, had to be postponed due to the worldwide spread of the SARS-CoV-2 virus. However, things seem to gradually recover, and so we have shifted the workshop to June 13-17, 2021.
The SARS-CoV-2 is still a world-wide threat, and no one knows how this thread will affect the future of scientific meetings and collaborations. We are confident that face-to-face workshops with a lot of space for personal interaction and individual meetings "off the record" will remain essential for our scientific business. Also, crystal growth will remain utmost important, continuing to shape the foundation of major advances in technology. Anyway, we will continue to monitor the situation and have to balance this need with both health security and climate change issues. But we have to try: Things can only get better if we avail us of the opportunities we have.
Welcome Message - About IWCGT-8
The workshop - the eighth of its series initiated by Hans Scheel in 1998 - is devoted to Crystal Growth Technology, which also covers industrial scale technologies and equipment. The focus lies on the preparation of bulk and substrate crystals.
The workshop aimed to provide links between R & D and actual production, besides bridging science and practice. International experts will present topical lectures with additional time allotted for discussions and debate. Attendees present their research at the evening poster sessions.
Topics of the workshop include for example:
- Growth technology for micro-/nano-/opto-electronics and photovoltaics (Si, Ge, III-Vs etc.)
- Substrate crystals for wide bandgap semiconductors (Sapphire, SiC, GaN, AlN, Oxide electronics etc.)
- Growth of piezoelectrics, lasers, luminescent materials etc. (Oxide, Dielectric crystals etc.)
- Crystals for detectors and large-scale facilities (HPGe, CdTe, KDP etc.)
- Novel tools and technologies for crystal growth (Modeling, ML/AI, Industry 4.0 etc.)
- New approaches in crystal growth (specialized growth techniques, equipments, source and hot zone materials)
- Concepts and experience in crystal growth technologies going commercial
We are very pleased to invite you to this important workshop and experts gathering! Please save the date and share this information with interested colleagues.
Please find the tentative program and the list of confirmed speakers below. Abstract submission and preregistration for the workshop are postponed. We look forward to your contributions and attendance!
Prof. Dr.-Ing. Matthias Bickermann and
Priv.-Doz. Dr. R. Radhakrishnan Sumathi
for the IWCGT-8 organizing committee
Meet the experts in crystal growth technology at IWCGT-8!
The workshop is organized by
The conference begins on Sunday 13. June 2021 with a welcome reception starting around 4 pm and ends on Thursday 17. June 2021 after lunch at about 2 pm; see the tentative schedule.
The Conference will be held at the Pentahotel Berlin-Köpenick, Grünauer Str. 1, 12557 Berlin. The venue can be easily accessed from the city by public transport using the local trains (S-Bahn) to stations "Köpenick" or "Adlershof" and then with the tramway (lines 61, 63 or 68) to station "Köllnischer Platz".
- Preliminary list of invited speakers and timetable is published (see below)
- 01. March 2020: Registration and abstract submission started!
- 01. March 2021: Abstract submission deadline
- 15. March 2021: Notification of abstract acceptance
- 01. May 2021: Early bird registration (at reduced workshop fee) ends
- 13. June 2021: IWCGT-8 starts
Scope of the Workshop
Crystal growth has contributed to and enabled a substantial part of modern technology development, from piezoelectric, optical, and laser applications to today’s overwhelming photovoltaic market and booming use of electronic devices in information technology, communication, system control and power conversion. Producing crystals of higher perfection and at a lower cost is a prerequisite for their applications in any new functionalities, and efficient devices are the drivers of a rapidly changing world. Crystal growth technologists address these demanding requirements, and this workshop is where they meet.
Since its initiation in 1998 by Hans Scheel, the workshop is being perceived as a meeting of experts in crystal growth technology, in which invited renowned speakers give an in-depth presentations about a particular problem or challenge in the application-oriented crystal growth, and with lots of space for discussions and networking opportunities.
This approach has been proven very successful over these years and is continued at IWCGT-8 as well. The retreat-type of scenery and surroundings of the venue, long enough coffee breaks for refreshing and the relaxed barbecue dinner, not to forget, the two evening poster sessions are means to stimulate deeper discussions and to set the stage for a lively networking atmosphere among the participants. All attendees and in particular, young researchers, are asked to prepare abstracts and to present their own work as posters.
- Matthias Bickermann, IKZ Berlin, Germany (Chair)
- R. Radhakrishnan Sumathi, IKZ Berlin, Germany (Co-Chair)
- Edith D. Bourret-Courchesne, LBNL, USA
- Peter Capper, SELEX Galileo Infrared, UK
- Mitch Chou, National Sun Yat-Sen Univ., Taiwan
- Hanna Dabkowska, McMaster Univ., Canada
- Ben Depuydt, Umicore, Belgium
- Jeffrey J. Derby, Univ. Minnesota, USA
- Ernesto Diéguez Delgado, Univ. Autonoma Madrid, Spain
- Thierry Duffar, INP Grenoble, France
- Roberto Fornari, Univ. Parma, Italy
- Vincent J. Fratello, Integrated Photonics Inc., USA
- Jochen Friedrich, Fraunhofer IISB, Germany
- Alexander Gektin, Inst. Single Crystals, Kharkov, Ukraine
- Koichi Kakimoto, Kyushu Univ., Japan
- Frank M. Kießling, IKZ Berlin, Germany
- Chung-Wen Lan, National Taiwan Univ., Taiwan
- Yusuke Mori, Osaka Univ., Japan
- Maria Porrini, MEMC, a GlobalSemi Company, Italy
- Hans J. Scheel, Switzerland
- Peter G. Schunemann, BAE Systems, USA
- Nathan Stoddard, II-VI Optical Systems, USA
- Deren Yang, State Key Lab., Zhejiang Univ., China
- Evgenii V. Zharikov, D. Mendeleev Univ., Moscow, Russia
Program / Invited Speakers
The schedule is still tentative and the listing does not reflect the final program yet.
Program Schedule (Tentative)
|Time||Sun, Jun 13||Mon, Jun 14||Tue, Jun 15||Wed, Jun 16||Tue, Jun 17|
Invited Speakers (pre-confirmed, alphabetical order)
- Tatyana Bekker, V.S. Sobolev Institute RAS (Russia) on “Growth and characterization of functional borate and molybdate crystals”
- Edith Bourret, Lawrence Berkeley Natl. Lab (USA) on "In-situ crystal growth diagnostic using energy-resolved neutron imaging"
- Rafael Dalmau, Hexatech Inc. (USA) on “UV-C Transparent PVT AlN Substrates”
- Yasunori Furukawa, Oxide Corp. (Japan) on “Oxide crystals as optical and laser materials”
- Natascha Dropka, IKZ Berlin (Germany) on “Can artificial intelligence help us make better crystals?”
- Patricia Jeandel, Cristal Innov (France) on "Crystal Growth R&D and Technology : For a more competitive European community"
- Christian Kranert, Fraunhofer IISB+THM (Germany) on “Growth ridge analysis – a smart tool to investigate Cz processes and crystals”
- Roger Loo, IMEC (Belgium) on "Low Temperature Epitaxial Growth of Group IV Materials in View of Electrical Device Applications"
- Robert Menzel, IKZ Berlin (Germany) on “Novel concept for growth of Si single crystals from Si granulate”
- Andreas Mühe, PVA TePla (Germany) on “Current trends in crystal growth equipment and control”
- Yohei Otoki, SCIOCS (Japan) on "Recent topics of high quality VAS-GaN substrates for realizing high performance of opto/electric devices in mass production" (Recently added)
- Jan Polak, Crytur (Czech Rep.) on “The industrial production of oxide crystals”
- Maria Porrini, MEMC, a GlobalSemi Company (Italy) on “Czochralski Silicon resistivity limits: growth and applications”
- P.S. Raghavan, GTAT Inc. (USA) on “Sapphire single crystal growth”
- Shashwati Sen, Homi Bhabha National Inst. (India) on "Challenges in the Growth of Large Size Scintillator Single Crystals" (Recently added)
- Dmitri Souptel, FCM GmbH (Germany) on “Efficient use of resources in crystal growth technology”
- Kevin Stevens, Northrop Grumman Synoptics (USA) on “Ga2O3 crystal growth by Czochralski method”
- Ludwig Stockmeier, Siltronic (Germany) on “Big Data from Czochralski Si”
- Johannes Vanpaemel, Umicore (Belgium) on “Germanium crystal growth and applications”
- Martin Wegener, Karlsruhe Inst. of Technology (Germany) on “3D Metamaterials – Rationally Designed Artificial Crystals”
- Dirk Wulff-Molder, Korth Kristalle GmbH (Germany) on “Fluoride crystals for optical applications”
- Yadong Xu, Northwestern Polytechnical Univ. (China) on “Formation of secondary phase particles and the interplay mechanism with extended dislocations in CdZnTe bulk crystals”
- Deren Yang, Zhejiang Univ. (China) on “Growth and Dislocation Control of Cast-Mono Crystalline Silicon”
- Zhao Youwen, Inst. of Semiconductors CAS, Beijing (China) on “Twinning Suppression, Defects and Wafer Yield of VGF-grown InP Single Crystals”
- Kader Zaidat, SiMAP INP Grenoble (France) on “New Concept of CZ in Cold Crucible and FZ for Si Single Crystal”
How to Register
Please register here.
The link goes to ConfTool which will handle all registration, abstract submission, and payment matters. All data is handled securely and according to EU regulations.
Final registration and payment will open soon. The regular conference fee (including all meals with beverages and the conference dinner) will be 720 EUR for payments made on or before 01. May 2021.
How to Submit an Abstract
Abstract submission is open! Please register here to immediately access the submission form. Every participant may submit up to two abstracts. Abstract submission deadline has been adjusted to 01. March 2021.
As the lectures are by invitation only, regular participants will have the possibility for poster presentations subject to abstract submission and acceptance by the conference organizing committee.
The abstract size is one A4-page in PDF format. Please take care to save your document in PDF/A format so that all fonts are embedded; e.g. in Word, Export (rather than Print) to PDF and in the options dialog available during saving, check the "PDF/A compatible" option.
The author should include figures, tables, and references within the one page limit. The title should be placed at the top of the abstract, followed by the authors' names, affiliations, and e-mail address of the presenting author, a blank line, and the main text (optionally with figures). Acknowledgements and references might be added at the end of the abstract.
The abstract should have the following format:
- Paper size: A4
- Margins: 2.0 cm margins on all sides.
- Font style: "Times New Roman" or" Times" is recommended.
- Font size: 12 pt bold font is for title, 10 pt normal font for author names, affiliations, e-mail address, and main text. 9 pt normal font might be used for figure captions, table headings, footnotes, and references.
- The title, author names, affiliations, and email address lines should be centered. The main text should be blockquote.
A book of abstracts will be available at the workshop.
Contact the Organizers
For any question or suggestion in regard to the IWCGT-8, please contact us at firstname.lastname@example.org.
Phone: (030) 6392-3047
Fax: (030) 6392-3003
R. Radhakrishnan Sumathi
Phone: (030) 6392-3127
Fax: (030) 6392-3003