a single crystal the IWCGT-8 logo

8th International Workshop on Crystal Growth Technology (IWCGT-8)

Berlin/Germany·14-18 June 2020
Abstract submission and preregistration will open on 20 Feb. 2020!
We apologize for the delay.
In the meantime: see how to prepare your abstract.

Welcome Message - About IWCGT-8


The workshop - the eighth of its series initiated by Hans Scheel in 1998 - is devoted to Crystal Growth Technology, which also covers industrial scale technologies and equipments. The focus mainly lies on the preparation of bulk and substrate crystals.

The workshop aimed to provide links between R & D and actual production, besides bridging science and practices. International experts will present here topical lectures with additional time allotted for discussions and debate. The workshop will also comprise panel discussions and poster sessions.

Topics of the workshop include (tentative
  • Growth technology for micro-/nano-/opto- electronics and photovoltaics (Si, Ge, III-Vs etc.)
  • Substrate crystals for wide bandgap semiconductors (Sapphire, SiC, GaN, AlN, Oxide electronics etc.)
  • Growth of piezoelectrics, lasers, luminescent materials (Oxide, Dielectric crystals etc.)
  • Crystals for detectors and large-scale facilities (HPGe, CdTe, KDP etc.)
  • Novel tools and technologies for crystal growth (Modeling, ML/AI, Industry 4.0 etc.)
  • New approaches in crystal growth (specialized growth techniques, equipments, source and hot zone materials)

We are very pleased to invite you to this important workshop and experts gathering! Please save the date and share this information with interested colleagues.

Please find the tentative program and the list of confirmed speakers below. Abstract submission and preregistration for the workshop will open on 20 February 2020. Please check back around that date.

Prof. Dr.-Ing. Matthias Bickermann and
Priv.-Doz. Dr. R. Radhakrishnan Sumathi
for the IWCGT-8 organizing committee

Meet the experts in crystal growth technology at IWCGT-8!

The workshop is organized by
IKZ Berlin Leibniz-Institut für Kristallzüchtung (IKZ)
Max-Born-Str. 2, 10489 Berlin, Germany

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Workshop Details


Conference Time

The conference begins on Sunday (14 June 2020) with a welcome reception starting around 4 pm and ends on Thursday (18 June 2020) after lunch at about 2 pm; see the tentative schedule.

Conference Venue

The Conference will be held at the Pentahotel Berlin-Köpenick, Grünauer Str. 1, 12557 Berlin. The venue can be easily accessed from the city by public transport using the local trains (S-Bahn) to stations "Köpenick" or "Adlershof" and then with the tramway (lines 61, 63 or 68) to station "Köllnischer Platz".

Important dates

  • Preliminary list of invited speakers and timetable is published (see below)
  • Feb 20, 2020: Abstract submission starts
  • Mar 16, 2020: Abstract submission closes
  • Mar 20, 2020: Notification of abstract acceptance
  • May 1, 2020: Early bird registration closes
  • June 14, 2020: IWCGT-8 starts

Scope of the Workshop

Crystal growth has contributed to and enabled a substantial part of modern technology development, from piezoelectric, optical, and laser applications to today’s overwhelming photovoltaic market and booming use of electronic devices in information technology, communication, system control and power conversion. Producing crystals of higher perfection and at a lower cost is a prerequisite for their applications in any new functionalities, and efficient devices are the drivers of a rapidly changing world. Crystal growth technologists address these demanding requirements, and this workshop is where they meet.

Since its initiation in 1998 by Hans Scheel, the workshop is being perceived as a meeting of experts in crystal growth technology, in which invited renowned speakers give an in-depth presentations about a particular problem or challenge in the application-oriented crystal growth, and with lots of space for discussions and networking opportunities.

This approach has been proven very successful over these years and is continued at IWCGT-8 as well. The retreat-type of scenery and surroundings of the venue, long enough coffee breaks for refreshing and the relaxed barbecue dinner, not to forget, the two evening poster sessions are means to stimulate deeper discussions and to set the stage for a lively networking atmosphere among the participants. All attendees and in particular, young researchers, are asked to prepare abstracts and to present their own work as posters.

Steering Committee:

  • Matthias Bickermann, IKZ Berlin, Germany (Chair)
  • R. Radhakrishnan Sumathi, IKZ Berlin, Germany (Co-Chair)
  • Edith D. Bourret-Courchesne, LBNL, USA
  • Peter Capper, SELEX Galileo Infrared, UK
  • Mitch Chou, National Sun Yat-Sen Univ., Taiwan
  • Hanna Dabkowska, McMaster Univ., Canada
  • Ben Depuydt, Umicore, Belgium
  • Jeffrey J. Derby, Univ. Minnesota, USA
  • Ernesto Diéguez Delgado, Univ. Autonoma Madrid, Spain
  • Thierry Duffar, INP Grenoble, France
  • Roberto Fornari, Univ. Parma, Italy
  • Vincent J. Fratello, Integrated Photonics Inc., USA
  • Jochen Friedrich, Fraunhofer IISB, Germany
  • Alexander Gektin, Inst. Single Crystals, Kharkov, Ukraine
  • Koichi Kakimoto, Kyushu Univ., Japan
  • Frank M. Kießling, IKZ Berlin, Germany
  • Chung-Wen Lan, National Taiwan Univ., Taiwan
  • Yusuke Mori, Osaka Univ., Japan
  • Maria Porrini, MEMC, a GlobalSemi Company, Italy
  • Hans J. Scheel, Switzerland
  • Peter G. Schunemann, BAE Systems, USA
  • Nathan Stoddard, SolarWorld, USA
  • Deren Yang, State Key Lab., Zhejiang Univ., China
  • Evgenii V. Zharikov, D. Mendeleev Univ., Moscow, Russia

Program / Invited Speakers


The schedule as well as the topical areas are tentative and the listing does not reflect the final program yet.

Program Schedule (Tentative)

IWCGT-8 Timetable (tentative)

Invited Speakers (Confirmed)

Topical area A. Silicon, Germanium, Classical semiconductors

  • Maria Porrini, MEMC, a GlobalSemi Company (Italy) on “Czochralski Silicon resistivity limits: growth and applications”
  • Kader Zaidat, SiMAP INP Grenoble (France) on “Novel technologies for Si solidification”
  • Deren Yang, Zhejiang Univ. (China) on “Growth and Dislocation Control of Cast-Mono Crystalline Silicon”
  • Robert Menzel, IKZ Berlin (Germany) on “Novel concept for growth of Si single crystals from Si granulate”
  • Johannes Vanpaemel, Umicore (Belgium) on “Germanium crystal growth and applications”
  • Yadong Xu, Northwestern Polytechnical Univ. (China) on “Formation of secondary phase particles and the interplay mechanism with extended dislocations in CdZnTe bulk crystals”
  • Zhao Youwen, Inst. of Semiconductors CAS, Beijing (China) on “Twinning Suppression, Defects and Wafer Yield of VGF-grown InP Single Crystals”

Topical area B. Oxides, Halides, Optical Materials

  • Yasunori Furukawa, Oxide Corp. (Japan) on “Oxide crystals as optical and laser materials”
  • Jan Polak, Crytur (Czech Rep.) on “The industrial production of oxide crystals”
  • Tatyana Bekker, V.S. Sobolev Institute RAS (Russia) on “Growth and characterization of functional borate and molybdate crystals”
  • Dirk Wulff-Molder, Korth Kristalle GmbH (Germany) on “Fluoride crystals for optical applications”
  • Edith Bourret, Lawrence Berkeley Natl. Lab (USA) on "In-situ crystal growth diagnostic using energy-resolved neutron imaging"

Topical area C. Substrates for Wide Band-Gap Semiconductors

  • Rafael Dalmau, Hexatech Inc. (USA) on “UV-C Transparent PVT AlN Substrates”
  • Kevin Stevens, Northrop Grumman Synoptics (USA) on “Ga2O3 crystal growth by Czochralski method”
  • P.S. Raghavan, GTAT Inc. (USA) on “Sapphire single crystal growth”

Topical area D. Equipment, Control and Modeling in Crystal Growth

  • Andreas Mühe, PVA TePla (Germany) on “Current trends in crystal growth equipment and control”
  • Ludwig Stockmeier, Siltronic (Germany) on “Big Data from Czochralski Si”
  • Dmitri Souptel, FCM GmbH (Germany) on “Efficient use of resources in crystal growth technology”
  • Christian Kranert, Fraunhofer IISB+THM (Germany) on “Growth ridge analysis – a smart tool to investigate Cz processes and crystals”
  • Natascha Dropka, IKZ Berlin (Germany) on “Can artificial intelligence help us make better crystals?”
  • Patricia Jeandel, Cristal Innov (France) on "Crystal Growth R&D and Technology : For a more competitive European community"

Topical area E. Metamaterials and Substrate Issues in Thin-Film Growth

  • Roger Loo, IMEC (Belgium) on "Si, SiGe and GeSn-related research activities at IMEC"
  • Martin Wegener, Karlsruhe Inst. of Technology (Germany) on “3D Metamaterials – Rationally Designed Artificial Crystals”

How to Register


Registration will open on 20 February 2020. All details about the registration and payment will appear here in due course.

How to Submit an Abstract


Abstract submission will open on 20 February 2020. Every participant may submit up to two abstracts.

As the lectures are by invitation only, regular participants will have the possibility for poster presentations subject to abstract submission and acceptance by the conference organizing committee.

The abstract size is one A4-page in PDF format.

Authors are requested to submit the abstract by the abstract submission page no later than March 16, 2020. Only PDF is accepted as file format.

The author should include figures, tables, and references within the one page limit. The title should be placed at the top of the abstract, followed by the authors' names, affiliations, and e-mail address of the presenting author, a blank line, and the main text (optionally with figures). Acknowledgements and references might be added at the end of the abstract.

The abstract should have the following format:

  • Paper size: A4
  • Margins: 2.0 cm margins on all sides.
  • Font style: "Times New Roman" or" Times" is recommended.
  • Font size:
    • 12 pt bold font is for title and
    • 10 pt normal font is for authors' names, affiliations, e-mail address, and main text.
    • 9 pt normal font might be used for figure captions, table headings, footnotes, and references.
  • The title, author names, affiliations, and email address lines should be centered.
  • The main text should be blockquote.

A book of abstracts will be available at the workshop.

Contact the Organizers


For any question or suggestion in regard to the IWCGT-8, please contact us.

Matthias Bickermann
Phone: (030) 6392-3047
Fax: (030) 6392-3003
Email: matthias.bickermann@ikz-berlin.de

R. Radhakrishnan Sumathi
Phone: (030) 6392-3127
Fax: (030) 6392-3003
Email: radhakrishnan.sumathi@ikz-berlin.de

IWCGT-8 is an event organized by the

IKZ Berlin Leibniz-Institut für Kristallzüchtung (IKZ)
Max-Born-Str. 2, 10489 Berlin, Germany

IKZ WebsiteLegal noticePrivacy Policy